| Author(s) | A. A. I. Al-Bassam |
| Affiliation | Physics Department, Faculty a/Science, King Saud University, P. O. Box 2455, Riyadh 11451, Saudi Arabia |
| Title | Properties of Culn1-xGaxSezThin Films |
| Source | Journal of King Saud University. Science. Volume 10, No 2. (1998/1418) |
| Abstract | Polycrystalline CuInI-.Ga"Sez thin films have been fabricated. Some physical properties such as lattice parameters, crystal structure and microstructure of CuIn(_.Ga,.Sezwere determined using X-ray diffractomety and scaning electron microscopy. X-ray diffraction analysis showed that the films with x :0; 0.5 have a chalcopyrite structure and the films with x ~ 0.5 have a zinc blende structure. The lattice par..meters were found to vary linearly with composition over a wide range from x =0 to x =1.0. The variation of lattice parameters with composition was found to obey Vegard's law. The variation of the % with composition was also linear. The quality of a wide range of Cu 1nl_.Ga,. Sez thin film absorbers from CuInSe to CuGaSe was evaluated by Photoluminescence (PL) measurements. |
