| Author(s) | A. M. Al-Dhafiri |
| Affiliation | Department of Physics, College of Science, King Saud University, P. O. Box 2455, Riyadh 11451 Email: adhafiri@ksu.edu.sa |
| Title | Structural and Electrical Properties of Au/Si:H diodes |
| Source | Journal of King Saud University. Science. Volume 16, No 2. (2004/1424) |
| Abstract | N-type <100> crystalline silicon wafers were used as a substrate for a-Si:H film deposited. Aluminum was evaporated onto device quality a-Si:H films deposited in an ultra high vacuum plasma enhanced chemical vapor deposition (PECVD) system. The Al/a-Si:H samples were annealed in the range of 50-4000C, for 30minutes. XRD analysis showed a very good polycrystalline of the interacted film at 3500C. Schottky barriers were made by vacuum evaporation of a gold onto the a-Si:H surfaces after removing the Al by a standard etching solution. Current- voltage characteristics (J-V) characteristics and capacitance-voltage measurements (C-V) were carried out as a function of temperature annealing of Al/a-Si:H substrate. The ideality factor, barrier height and carrier concentration were calculated. |
